An insight into the high frequency analysis of work function modulated cylindrical surrounding gate MOSFET. (2018)

• Record Type: Journal Article
• Authors: Jena, Biswajit; Dash, Sidhartha; Mishra, Guru Prasad
• Is Part Of: International journal of nanoparticles. Volume 10:Number 1/2(2018)
• Page Start: 15
• Page End: 26
• Publication Date: 2018
• Subjects: cut-off frequency -- maximum oscillation frequency -- CSGM -- WMCSGM -- work function modulation; Nanotechnology -- Periodicals; 620.505
• Languages: English
• ISSNs: 1753-2507

Abstract

The unique design along with greater accuracy in device performance has made cylindrical surrounding gate MOSFET (CSGM) a cutting edge device in the present VLSI technology. Due to its cylindrical geometry, this device provides higher packing density and higher scaling possibilities. In this work, a work function engineering based metal gate with continuous mole fraction variation along the z-axis in a cylindrical surrounding gate MOSFET (WMCSGM) is introduced. The proposed WMCSGM model exhibits improved RF performance as compared to conventional CSGM model. The static gm -VGS curve and Cgg -VGS curves are investigated clearly. The relevant electrical parameters such as threshold voltage (Vth ), drain current (Id ) and transconductance are extracted. Along with the electrical parameters, RF parameters and gain parameters (current gain and voltage gain) and different performance measures (cut-off frequency, maximum oscillation frequency) have been extensively investigated.