Corrigendum to "Effects of polycrystalline AlN film on the dynamic performance of AlGaN/GaN high electron mobility transistors" [Mat. Des. 148(2018) 1–7]. (15th January 2019) - Zhang, Dongliang; Cheng, Xinhong; Zheng, Li; Shen, Lingyan; Wang, Qian; Gu, Ziyue; Qian, Ru; Wu, Dengpeng; Zhou, Wen; Cao, Duo; Yu, Yuehui