Identification of elasto-plastic and nonlinear fracture mechanics parameters of silver-plated copper busbars for photovoltaics. (January 2019)

• Record Type: Journal Article
• Authors: Carollo, V.; Piga, D.; Borri, C.; Paggi, M.
• Is Part Of: Engineering fracture mechanics. Volume 205(2019)
• Page Start: 439
• Page End: 454
• Publication Date: 2019-01
• Subjects: Cohesive zone model -- Elasto-plastic fracture -- Parameters identification -- Gradient descent method -- Particle swarm optimization; Fracture mechanics -- Periodicals; Rupture, Mécanique de la -- Périodiques; Fracture mechanics; Periodicals; 620.112605
• DOI: 10.1016/j.engfracmech.2018.11.014
• Languages: English
• ISSNs: 0013-7944

Abstract

Highlights: Identification of constitutive model parameters for elasto-plastic fracture. Multiscale experimental testing of silver-plated copper busbars for photovoltaics. Identification based on the gradient descent method and particle swarm optimization. Abstract: Silver-plated copper busbars are screen printed onto silicon solar cells and have the key role to collect the electric current produced by the solar cell. Busbars of two adjacent solar cells are then connected by a soldered ribbon made of the same material. Due to mechanical and thermal loads, such a ribbon is subject to axial deformation that, often, causes plasticity and, in some cases, its breakage due to crack growth. A procedure based on the gradient-descent method and particle swarm optimization is herein proposed for the identification of elasto-plastic and nonlinear (cohesive zone model, CZM) fracture mechanics parameters of silver-plated copper busbars. The proposed method requires the experimental determination of the force-displacement curves from uniaxial tensile tests on busbar samples with and without initial notches. The inspection of in situ SEM images during the tests allows also the estimation of the crack opening, which is found to be an important local quantity to assess the reliability of different CZMs in simulating a crack growth process consistent with the real one.