Fabrication and Field Emission Properties of Diamond‐Like Carbon Nanostructure Arrays Deposited by Filtered Cathodic Vacuum Arc. Issue 11 (12th July 2016)

• Record Type: Journal Article
• Authors: Li, Yunhui; Yan, Xueqing; Yang, Jin; Zhang, Gengmin
• Is Part Of: Plasma processes and polymers. Volume 13:Issue 11(2016)
• Page Start: 1044
• Page End: 1052
• Publication Date: 2016-07-12
• Subjects: diamond‐like carbon (DLC) -- field emission -- filtered cathodic vacuum arc -- nanostructures -- scanning electron microscopy (SEM); Plasma polymerization -- Periodicals; Plasma-enhanced chemical vapor deposition -- Periodicals; Plasma chemistry -- Periodicals
• DOI: 10.1002/ppap.201600023
• Languages: English
• ISSNs: 1612-8850

Abstract

Abstract : Diamond‐like carbon (DLC) films are deposited by filtered cathodic vacuum arc (FCVA) at room temperature. Well‐aligned DLC nanofiber arrays are structured using porous anodic aluminum oxide (AAO) templates. Along with a slow process of template etching, the DLC nanofibers gradually bend over and closely weave into a mask, preventing the AAO from entirely dissolving into the etching solution. This resist‐mask of DLC/AAO nanostructure is removed by the effect of electric charge accumulation at a high electric field and then the DLC nano‐whisker array is formed. The electron field emission (EFE) properties of DLC nanoarrays indicate a low turn‐on field of 1.60 V µm −1 and a threshold field of 2.98 V µm −1 . These DLC nanowhisker arrays signify a high potential for assembling carbon‐based vacuum microelectronic devices. Abstract : Novel diamond‐like carbon (DLC) nanostructure arrays are structured by filtered cathodic vacuum arc deposition at room temperature. Well‐aligned DLC nanofibers with a length of more than 20 μm are formed by carbon cathodic arc plasma flowing into template nanopores. DLC nano‐whisker arrays, which are shaped by removing the surface resist‐mask due to the electric charge accumulation effect, signify a high potential towards excellent field emission devices.