Coexistence of diode-like volatile and multilevel nonvolatile resistive switching in a ZrO2/TiO2 stack structure. (11th September 2015)

• Record Type: Journal Article
• Authors: Li, Yingtao; Yuan, Peng; Fu, Liping; Li, Rongrong; Gao, Xiaoping; Tao, Chunlan
• Is Part Of: Nanotechnology. Volume 26:Number 39(2015)
• Publication Date: 2015-09-11
• Subjects: resistive switching -- volatile -- nonvolatile; 61.72.jd -- 68.60.-p -- 72.20.-i -- 73.40.Rw -- 77.55.-g -- 77.55.fb; Nanotechnology -- Periodicals; Nanotechnology -- Periodicals; Nanotechnology; Publications périodiques; Nanotechnologies; Periodicals; 620.5
• DOI: 10.1088/0957-4484/26/39/391001
• Languages: English
• ISSNs: 0957-4484

Abstract

Abstract: Diode-like volatile resistive switching as well as nonvolatile resistive switching behaviors in a Cu/ZrO2 /TiO2 /Ti stack are investigated. Depending on the current compliance during the electroforming process, either volatile resistive switching or nonvolatile resistive switching is observed. With a lower current compliance (<10 μ A), the Cu/ZrO2 /TiO2 /Ti device exhibits diode-like volatile resistive switching with a rectifying ratio over 10 6 . The permanent transition from volatile to nonvolatile resistive switching can be obtained by applying a higher current compliance of 100 μ A. Furthermore, by using different reset voltages, the Cu/ZrO2 /TiO2 /Ti device exhibits multilevel memory characteristics with high uniformity. The coexistence of nonvolatile multilevel memory and diode-like volatile resistive switching behaviors in the same Cu/ZrO2 /TiO2 /Ti device opens areas of applications in high-density storage, logic circuits, neural networks, and passive crossbar memory selectors.