Self-induced growth of vertical GaN nanowires on silica. (22nd February 2016)

• Record Type: Journal Article
• Authors: Kumaresan, V; Largeau, L; Oehler, F; Zhang, H; Mauguin, O; Glas, F; Gogneau, N; Tchernycheva, M; Harmand, J-C
• Is Part Of: Nanotechnology. Volume 27:Number 13(2016)
• Publication Date: 2016-02-22
• Subjects: gallium nitride -- nanowires -- PAMBE -- photoluminescence -- inversion domains -- silicon oxide substrates; Nanotechnology -- Periodicals; Nanotechnology -- Periodicals; Nanotechnology; Publications périodiques; Nanotechnologies; Periodicals; 620.5
• DOI: 10.1088/0957-4484/27/13/135602
• Languages: English
• ISSNs: 0957-4484

Abstract

Abstract: We study the self-induced growth of GaN nanowires on silica. Although the amorphous structure of this substrate offers no possibility of an epitaxial relationship, the nanowires are remarkably aligned with the substrate normal whereas, as expected, their in-plane orientation is random. Their structural and optical characteristics are compared to those of GaN nanowires grown on standard crystalline Si (111) substrates. The polarity inversion domains are much less frequent, if not totally absent, in the nanowires grown on silica, which we find to be N-polar. This work demonstrates that high-quality vertical GaN nanowires can be elaborated without resorting to bulk crystalline substrates.