Hybrid InGaAs quantum well–dots nanostructures for light-emitting and photo-voltaic applications. (2nd September 2015)

• Record Type: Journal Article
• Authors: Mintairov, S A; Kalyuzhnyy, N A; Lantratov, V M; Maximov, M V; Nadtochiy, A M; Rouvimov, Sergei; Zhukov, A E
• Is Part Of: Nanotechnology. Volume 26:Number 38(2015)
• Publication Date: 2015-09-02
• Subjects: quantum well -- quantum dot -- metal–organic chemical vapor deposition -- diode lasers -- solar cells; 42.55.Px -- 78.67.De -- 78.67.Hc -- 78.56.-a 88.40.H -- 88.40.; Nanotechnology -- Periodicals; Nanotechnology -- Periodicals; Nanotechnology; Publications périodiques; Nanotechnologies; Periodicals; 620.5
• DOI: 10.1088/0957-4484/26/38/385202
• Languages: English
• ISSNs: 0957-4484

Abstract

Abstract: Hybrid quantum well–dots (QWD) nanostructures have been formed by deposition of 7–10 monolayers of In0.4 Ga0.6 As on a vicinal GaAs surface using metal–organic chemical vapor deposition. Transmission electron microscopy, photoluminescence and photocurrent analysis have shown that such structures represent quantum wells comprising three-dimensional (quantum dot-like) regions of two kinds. At least 20 QWD layers can be deposited defect-free providing high gain/absorption in the 0.9–1.1 spectral interval. Use of QWD media in a GaAs solar cell resulted in a photocurrent increment of 3.7 mA cm −2 for the terrestrial spectrum and by 4.1 mA cm −2 for the space spectrum. Diode lasers based on QWD emitting around 1.1 μ m revealed high saturated gain and low transparency current density of about 15 cm −1 and 37 A cm −2 per layer, respectively.