A 40-GHz Colliding Pulse Mode-Locked Semiconductor Laser*Supported by the National Natural Science Foundation of China under Grant Nos 61335009, 61274046 and 61474111. (June 2016)

• Record Type: Journal Article
• Authors: Liu 刘, Song-Tao 松涛; Zhang 张, Rui-Kang 瑞康; Lu 陆, Dan 丹; Kan 阚, Qiang 强; Wang 王, Wei 圩; Ji 吉, Chen 晨
• Is Part Of: Chinese physics letters. Volume 33:Number 6(2016:Jun.)
• Publication Date: 2016-06
• Subjects: 42.55.Px -- 42.60.Fc -- 42.65.Re; Physics -- Periodicals; Electronic journals; 530.05
• DOI: 10.1088/0256-307X/33/6/064205
• Languages: English
• ISSNs: 0256-307X

Abstract

Abstract : A monolithically active-passive integrated colliding pulse mode-locked semiconductor laser is demonstrated in the InGaAsP/InP material system. The device is mode locked at the second harmonic passive mode-locking regime with a wide mode-locking range. Pulse trains with the repetition rate of 40 GHz, 3-dB rf line width of 25 kHz, the pulse width of 2.5 ps, and a nearly transform-limited time-bandwidth product of 0.53 are obtained.