Low-temperature gas-barrier films by atomic layer deposition for encapsulating organic light-emitting diodes. (14th June 2016)

• Record Type: Journal Article
• Authors: Tseng, Ming-Hung; Yu, Hui-Huan; Chou, Kun-Yi; Jou, Jwo-Huei; Lin, Kung-Liang; Wang, Chin-Chiun; Tsai, Feng-Yu
• Is Part Of: Nanotechnology. Volume 27:Number 29(2016)
• Publication Date: 2016-06-14
• Subjects: atomic layer deposition -- thin-film encapsulation -- flexible electronics -- organic light-emitting diodes -- organic electronics; Nanotechnology -- Periodicals; Nanotechnology -- Periodicals; Nanotechnology; Publications périodiques; Nanotechnologies; Periodicals; 620.5
• DOI: 10.1088/0957-4484/27/29/295706
• Languages: English
• ISSNs: 0957-4484

Abstract

Abstract: Dependences of gas-barrier performance on the deposition temperature of atomic-layer-deposited (ALD) Al2 O3, HfO2, and ZnO films were studied to establish low-temperature ALD processes for encapsulating organic light-emitting diodes (OLEDs). By identifying and controlling the key factors, i.e. using H2 O2 as an oxidant, laminating Al2 O3 with HfO2 or ZnO layers into AHO or AZO nanolaminates, and extending purge steps, OLED-acceptable gas-barrier performance (water vapor transmission rates ∼ 10 −6 g m −2 d −1 ) was achieved for the first time at a low deposition temperature of 50 °C in a thermal ALD mode. The compatibility of the low-temperature ALD process with OLEDs was confirmed by applying the process to encapsulate different types of OLED devices, which were degradation-free upon encapsulation and showed adequate lifetime during accelerated aging tests (pixel shrinkage <5% after 240 h at 60 °C/90% RH).