Artificial Synapses: Gate‐Tunable Synaptic Plasticity through Controlled Polarity of Charge Trapping in Fullerene Composites (Adv. Funct. Mater. 50/2018). (10th December 2018)

• Record Type: Journal Article
• Authors: Ren, Yi; Yang, Jia‐Qin; Zhou, Li; Mao, Jing‐Yu; Zhang, Shi‐Rui; Zhou, Ye; Han, Su‐Ting
• Is Part Of: Advanced functional materials. Volume 28:Number 50(2018)
• Page Start: n/a
• Page End: n/a
• Publication Date: 2018-12-10
• Subjects: artificial synapses -- composite materials -- controlled morphology -- flexible transistors -- organic electronics; Materials -- Periodicals; Chemical vapor deposition -- Periodicals; 620.11
• DOI: 10.1002/adfm.201870357
• Languages: English
• ISSNs: 1616-301X

Abstract

Abstract : In article number1805599, Ye Zhou, Su‐Ting Han and co‐workers demonstrate a flexible organic synaptic transistor capable of concurrently exhibiting signal transmission and learning functions. Fullerene trapping sites are doped in polymer by facile solution process to form the hybrid active structure. Comprehensive synaptic functions have been successfully emulated in this three‐terminal device.