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HARVARD Citation
Wang, X. et al. (2017). Element-specific amorphization of vacancy-ordered GeSbTe for ternary-state phase change memory. Acta materialia. pp. 242-248. [Online].
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Wang, X. et al. (2017). Element-specific amorphization of vacancy-ordered GeSbTe for ternary-state phase change memory. Acta materialia. pp. 242-248. [Online].