Combined Ultra High Vacuum Raman and Electronic Transport Characterization of Large‐Area Graphene on SiO2. Issue 12 (27th November 2018)

• Record Type: Journal Article
• Authors: Hell, Martin G.; Falke, Yannic; Bliesener, Andrea; Ehlen, Niels; Senkovskiy, Boris V.; Szkopek, Thomas; Grüneis, Alexander
• Is Part Of: Physica status solidi. Volume 255:Issue 12(2018)
• Page Start: n/a
• Page End: n/a
• Publication Date: 2018-11-27
• Subjects: bubbling transfer -- field‐effect transistors -- graphene -- Ir(111) -- polymethylmethacrylate -- transfer of graphene -- ultra‐high vacuum Raman; Solid state physics -- Periodicals; Solids -- Periodicals; Atomic structure -- Periodicals; 530.41
• DOI: 10.1002/pssb.201800456
• Languages: English
• ISSNs: 0370-1972

Abstract

Abstract : An original experimental setup which allows for simultaneous sample characterization by Raman spectroscopy and electronic tranport in ultra‐high vacuum at low temperatures is presented. We show the applicability of this setup for the case of graphene that is transferred from an Ir(111) single crystal onto SiO2 . The transfer of graphene is carried out using a water‐promoted electrochemical bubbling technique which is applied to graphene/Ir for the first time. The characterization prior to the transfer includes electron diffraction, photoemission spectroscopy and Raman spectroscopy using ultraviolet excitation. Following the transfer procedure, the graphene layer is electrically contacted and mounted onto a special sample carrier. This carrier allows for combined Raman and transport measurements inside an ultra high vacuum (UHV) system. UHV Raman mapping reveals a large area homogeneous graphene quality over several mm 2 characterized by a D/G intensity ratio less than 0.1. UHV electrical characterization of transferred graphene in a field effect transistor geometry yields a carrier mobility of 675 cm 2 V −1 s −1 . Upon alkali metal doping in UHV conditions using a Cs getter, a decrease of the 4‐point resistance from above 2500 Ω to below 10 Ω is observed. The presented approach paves the way for future combined UHV Raman and transport characterization of two‐dimensional materials that are doped into superconducting or charge‐density‐wave ground states. Abstract : An original experimental setup is presented that allows simultaneous sample characterization by Raman spectroscopy and electronic transport inside ultra‐high vacuum (UHV). The UHV transport measurements during alkali metal deposition of graphene on Si wafers reveal a massive decrease of the four‐point resistance of graphene by two orders of magnitude. This is attributed to a doping‐induced increase in the carrier concentration.