Cite
HARVARD Citation
Gucmann, F. et al. (2018). Creation of Two‐Dimensional Electron Gas and Role of Surface Donors in III‐N Metal‐Oxide‐Semiconductor High‐Electron Mobility Transistors. Physica status solidi. 215 (24), p. n/a. [Online].
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Gucmann, F. et al. (2018). Creation of Two‐Dimensional Electron Gas and Role of Surface Donors in III‐N Metal‐Oxide‐Semiconductor High‐Electron Mobility Transistors. Physica status solidi. 215 (24), p. n/a. [Online].