Control of refractive index by annealing to achieve high figure of merit for TiO2/Ag/TiO2 multilayer films. Issue 12 (September 2016)

• Record Type: Journal Article
• Authors: Kim, Jae-Ho; Kim, Dae-Hyun; Kim, Sun-Kyung; Bae, Dukkyu; Yoo, Young-Zo; Seong, Tae-Yeon
• Is Part Of: Ceramics international. Volume 42:Issue 12(2016)
• Page Start: 14071
• Page End: 14076
• Publication Date: 2016-09
• Subjects: TiO2 -- Refractive index -- Ag -- Transparent conducting electrode; Ceramics -- Periodicals; Céramique industrielle -- Périodiques; Ceramics; Periodicals; Electronic journals; 666
• DOI: 10.1016/j.ceramint.2016.06.015
• Languages: English
• ISSNs: 0272-8842

Abstract

Abstract: We modified the refractive index ( n ) of TiO2 by annealing at various temperatures to obtain a high figure of merit (FOM) for TiO2 /Ag/TiO2 (45 nm/17 nm/45 nm) multilayer films deposited on glass substrates. Unlike the as-deposited and 300 °C-annealed TiO2 films, the 600 °C-annealed sample was crystallized in the anatase phase. The as-deposited TiO2 /Ag/as-deposited TiO2 multilayer film exhibited a transmittance of 94.6% at 550 nm, whereas that of the as-deposited TiO2 /Ag/600 °C-annealed TiO2 (lower) multilayer film was 96.6%. At 550 nm, n increased from 2.293 to 2.336 with increasing temperature. The carrier concentration, mobility, and sheet resistance varied with increasing annealing temperature. The samples exhibited smooth surfaces with a root-mean-square roughness of 0.37–1.09 nm. The 600 °C-annealed multilayer yielded the highest Haacke's FOM of 193.9×10 −3 Ω −1 .