Cite
HARVARD Citation
Lazăr, O. et al. (2015). Correlation between transient evolutions of the gate and drain currents in AlGaN/GaN technologies. Microelectronics and reliability. 55 (9), pp. 1714-1718. [Online].
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Lazăr, O. et al. (2015). Correlation between transient evolutions of the gate and drain currents in AlGaN/GaN technologies. Microelectronics and reliability. 55 (9), pp. 1714-1718. [Online].