Cite
HARVARD Citation
Abbate, C. et al. (2015). Experimental study of Single Event Effects induced by heavy ion irradiation in enhancement mode GaN power HEMT. Microelectronics and reliability. 55 (9), pp. 1496-1500. [Online].
This is an interim version of our Electronic Legal Deposit Catalogue-eJournals and eBooks while we continue to recover from a cyber-attack.
Abbate, C. et al. (2015). Experimental study of Single Event Effects induced by heavy ion irradiation in enhancement mode GaN power HEMT. Microelectronics and reliability. 55 (9), pp. 1496-1500. [Online].