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HARVARD Citation
Fleury, C. et al. (2015). High temperature performances of normally-off p-GaN gate AlGaN/GaN HEMTs on SiC and Si substrates for power applications. Microelectronics and reliability. 55 (9), pp. 1687-1691. [Online].
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Fleury, C. et al. (2015). High temperature performances of normally-off p-GaN gate AlGaN/GaN HEMTs on SiC and Si substrates for power applications. Microelectronics and reliability. 55 (9), pp. 1687-1691. [Online].