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HARVARD Citation
Yonezawa, T. et al. (2019). Atomistic study of GaSe/Ge(111) interface formed through van der Waals epitaxy. Surface and interface analysis. pp. 95-99. [Online].
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Yonezawa, T. et al. (2019). Atomistic study of GaSe/Ge(111) interface formed through van der Waals epitaxy. Surface and interface analysis. pp. 95-99. [Online].