Metal‐Insulator Transition: 3D Local Manipulation of the Metal–Insulator Transition Behavior in VO2 Thin Film by Defect‐Induced Lattice Engineering (Adv. Mater. Interfaces 8/2018). Issue 8 (23rd April 2018)

• Record Type: Journal Article
• Authors: Jia, Qi; Grenzer, Jörg; He, Huabing; Anwand, Wolfgang; Ji, Yanda; Yuan, Ye; Huang, Kai; You, Tiangui; Yu, Wenjie; Ren, Wei; Chen, Xinzhong; Liu, Mengkun; Facsko, Stefan; Wang, Xi; Ou, Xin
• Is Part Of: Advanced materials interfaces. Volume 5:Issue 8(2018)
• Page Start: n/a
• Page End: n/a
• Publication Date: 2018-04-23
• Subjects: lattice engineering -- metal–insulator transition -- open volume defect -- vanadium dioxide; Materials science -- Periodicals; 620.11
• DOI: 10.1002/admi.201870034
• Languages: English
• ISSNs: 2196-7350

Abstract

Abstract : 3D local manipulation of metal‐insulator transition in VO2 is achieved by noble gas ion implantation, which is essential for the fabrication of highly integrated and tunable electronic or photonic devices, for example, metamaterials, field‐effect transistors, high‐density memory devices and optical manipulators. This is reported by Xin Ou and co‐workers in article number1701268 .