All‐Oxide MoOx/SnOx Charge Recombination Interconnects for Inverted Organic Tandem Solar Cells. Issue 10 (22nd December 2017)

• Record Type: Journal Article
• Authors: Becker, Tim; Trost, Sara; Behrendt, Andreas; Shutsko, Ivan; Polywka, Andreas; Görrn, Patrick; Reckers, Philip; Das, Chittaranjan; Mayer, Thomas; Di Carlo Rasi, Dario; Hendriks, Koen H.; Wienk, Martijn M.; Janssen, René A. J.; Riedl, Thomas
• Is Part Of: Advanced energy materials. Volume 8:Issue 10(2018)
• Page Start: n/a
• Page End: n/a
• Publication Date: 2017-12-22
• Subjects: atomic layer deposition -- charge recombination layers -- inverted organic solar cells -- organic tandem solar cells -- tin oxide; Energy harvesting -- Materials -- Periodicals; Energy conversion -- Materials -- Periodicals; Energy storage -- Materials -- Periodicals; Photovoltaics -- Periodicals; Fuel cells -- Periodicals; Thermoelectric materials -- Periodicals; 621.31
• DOI: 10.1002/aenm.201702533
• Languages: English
• ISSNs: 1614-6832

Abstract

Abstract: Multijunction solar cells are designed to improve the overlap with the solar spectrum and to minimize losses due to thermalization. Aside from the optimum choice of photoactive materials for the respective sub‐cells, a proper interconnect is essential. This study demonstrates a novel all‐oxide interconnect based on the interface of the high‐work‐function (WF) metal oxide MoO x and low‐WF tin oxide (SnO x ). In contrast to typical p‐/n‐type tunnel junctions, both the oxides are n‐type semiconductors with a WF of 5.2 and 4.2 eV, respectively. It is demonstrated that the electronic line‐up at the interface of MoO x and SnO x comprises a large intrinsic interface dipole (≈0.8 eV), which is key to afford ideal alignment of the conduction band of MoO x and SnO x, without the requirement of an additional metal or organic dipole layer. The presented MoO x /SnO x interconnect allows for the ideal (loss‐free) addition of the open circuit voltages of the two sub‐cells. Abstract : A novel all‐oxide recombination interconnect for organic tandem solar cells is reported. A large interface dipole between the high‐work‐function (WF) metal oxide MoO x and low‐WF tin oxide (SnO x ) affords ideal alignment of the conduction band of the two n‐type metal oxides. The actual recombination of electrons with holes occurs at the interface of organic/MoO x of the lower sub‐cell.