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HARVARD Citation
Elghoul, N. et al. (n.d.). Annealing effects on electrical and optical properties of a-Si:H layer deposited by PECVD. Materials science in semiconductor processing. pp. 302-309. [Online].
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Elghoul, N. et al. (n.d.). Annealing effects on electrical and optical properties of a-Si:H layer deposited by PECVD. Materials science in semiconductor processing. pp. 302-309. [Online].