Vertical‐Cavity Silicon‐Integrated Laser with In‐Plane Waveguide Emission at 850 nm. Issue 2 (15th January 2018)

• Record Type: Journal Article
• Authors: Kumari, Sulakshna; Haglund, Emanuel P.; Gustavsson, Johan S.; Larsson, Anders; Roelkens, Gunther; Baets, Roel G.
• Is Part Of: Laser & photonics reviews. Volume 12:Issue 2(2018)
• Page Start: n/a
• Page End: n/a
• Publication Date: 2018-01-15
• Subjects: intra‐cavity grating -- on‐chip laser source -- semiconductor lasers -- silicon photonics -- vertical‐cavity silicon‐integrated laser; Lasers -- Periodicals; Photonics -- Periodicals; Lasers -- Périodiques; Photonique -- Périodiques; 621.36
• DOI: 10.1002/lpor.201700206
• Languages: English
• ISSNs: 1863-8880

Abstract

Abstract: A continuous‐wave electrically‐pumped short‐wavelength hybrid vertical‐cavity silicon‐integrated laser (VCSIL) with in‐plane emission into a silicon nitride (SiN) waveguide is experimentally demonstrated. The coupling from the vertical cavity into the in‐plane SiN waveguide is achieved by a weak grating on the SiN waveguide placed inside the cavity. The grating provides coupling, sets the polarization of the lasing output, and provides transverse mode control. A 5 µm oxide‐aperture diameter device with a threshold current of 1.1 mA produces 73 µW single‐sided waveguide‐coupled optical output power at 2.6 mA bias current at a wavelength of 856 nm and a side‐mode suppression ratio (SMSR) of 29 dB. Abstract : In this work, a hybrid vertical‐cavity silicon‐integrated laser (VCSIL) with in‐plane emission into a silicon nitride (SiN) waveguide is experimentally demonstrated. A weak SiN grating placed inside the cavity enables coupling from the vertical cavity into the in‐plane SiN waveguide, sets the polarization of the lasing output, and provides transverse mode control.