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HARVARD Citation
Cherkashin, N. et al. (2015). Modelling of point defect complex formation and its application to H+ ion implanted silicon. Acta materialia. pp. 187-195. [Online].
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Cherkashin, N. et al. (2015). Modelling of point defect complex formation and its application to H+ ion implanted silicon. Acta materialia. pp. 187-195. [Online].