Binuclear Phthalocyanine Dimer‐Containing Yttrium Double‐Decker Ambipolar Semiconductor with Sensitive Response toward Oxidizing NO2 and Reducing NH3. Issue 4 (21st December 2017)

• Record Type: Journal Article
• Authors: Lu, Guang; Wang, Kang; Kong, Xia; Pan, Houhe; Zhang, Jinghui; Chen, Yanli; Jiang, Jianzhuang
• Is Part Of: ChemElectroChem. Volume 5:Issue 4(2018)
• Page Start: 605
• Page End: 609
• Publication Date: 2017-12-21
• Subjects: binuclear phthalocyanine -- double-decker -- ambipolar semiconductors -- organic field-effect transistors -- gas sensors; Electrochemistry -- Periodicals; 541.37
• DOI: 10.1002/celc.201701117
• Languages: English
• ISSNs: 2196-0216

Abstract

Abstract: A thin‐film transistor fabricated from a binuclear phthalocyanine dimer‐containing yttrium double‐decker complex [{Pc(OC4 H9 )8 }Y{BiPc(OC4 H9 )12 }Y{Pc(OC4 H9 )8 }] by using the quasi–Langmuir–Shäfer technique exhibits good ambipolar organic field‐effect transistor (OFET) device performance with carrier mobilities of 2.3 and 0.8 cm 2 V −1 s −1 for electrons and holes, respectively. These represent the highest mobilities achieved so far for solution‐processed small‐molecule single‐component‐based ambipolar OFET devices. The ambipolar semiconducting nature of this compound was further confirmed in an unambiguous manner by the high sensitive response of the device towards both oxidizing NO2 gas and reducing NH3 gas in the concentration range of approximately 0.5–3 ppm and 7.5–20 ppm, respectively, at room temperature. Abstract : All hands on deck : An ambipolar semiconductor with highest mobilities of 2.3 and 0.8 cm 2 V 1 s 1 for electrons and holes, respectively, is achieved for a solution‐processed [{Pc(OC4 H9 )8 }Y{BiPc(OC4 H9 )12 }Y{Pc(OC4 H9 )8 }] complex. This is further confirmed in an unambiguous manner by the highly sensitive response towards both oxidizing NO2 and reducing NH3 gases in concentration ranges of 0.5–3 ppm and 7.5–20 ppm, respectively.