Preparation and characterization of the rod-shaped stibnite. (July 2015)

• Record Type: Journal Article
• Authors: Ouni, B.; Zouini, M.; Lakhdar, M. Haj; Larbi, T.; Dimassi, W.; Amlouk, M.
• Is Part Of: Materials research bulletin. Volume 67(2015:Jul.)
• Page Start: 191
• Page End: 195
• Publication Date: 2015-07
• Subjects: A. Nanostructures -- B. Optical properties -- C. Raman spectroscopy -- D. Defects -- D. Electrical properties; Materials -- Periodicals; Crystal growth -- Periodicals; Matériaux -- Périodiques; Cristaux -- Croissance -- Périodiques; Crystal growth; Materials; Periodicals; 620.11
• DOI: 10.1016/j.materresbull.2015.03.003
• Languages: English
• ISSNs: 0025-5408

Abstract

Graphical abstract: Highlights: A facile route to synthesize large-scale rod-like Sb2 S3 micro-wires was presented. A deep analysis conjoint between band tails, band gap alteration and electrical model. The band gap is 1.75 eV which may hold for solar energy conversion. Abstract: Stibnite (Sb2 S3 ) micro-wires have been grown on glass substrates by sulfuration of Sb thermal evaporated film in a vacuum sealed tube in presence of sulfur powder at 300 °C for 6 h. X-ray diffraction and Raman spectroscopy techniques indicate that the synthesized micro-wires have an orthorhombic structure. SEM micrographs show rod-shaped micro-wires with a typical length of several tens of micrometers and a diameter of the order of 0.5 μm. The absorption coefficient dependence on the photon energy in the UV–visible range revealed the existence of a direct transition with an energy band gap of about 1.7 eV. Moreover, the band tails and localized states which are related to the level of defects in the material will be presented. These parameters were determined from the exponential absorption profile. All these results have been evaluated and discussed in terms of alteration of band gap edge and electrical measurements.