A novel method for in situ growing Ge-rich polycrystalline SiGe thin films on glass at low temperature. (October 2015)

• Record Type: Journal Article
• Authors: Tao, Ke; Wang, Jin; Jia, Rui; Sun, Yun; Jin, Zhi; Lin, Xinyu
• Is Part Of: Scripta materialia. Volume 107(2015)
• Page Start: 100
• Page End: 102
• Publication Date: 2015-10
• Subjects: Polycrystalline SiGe thin film -- Glass substrate -- Low temperature; Materials -- Periodicals; Metallurgy -- Periodicals; Metalen; Legeringen; Materiaalkunde; Metals, metalworking and machinery industries; Metals; Electronic journals; 620.11
• DOI: 10.1016/j.scriptamat.2015.05.030
• Languages: English
• ISSNs: 1359-6462

Abstract

Graphical abstract: Abstract : In this paper, a novel method has been presented to fabricate Ge-rich poly-SiGe thin films on glass by chemical vapor deposition at temperatures as low as 300 °C. The nucleation mechanism of Ge on insulator has been investigated and the crystal quality of poly-SiGe has been confirmed by Raman spectra, XRD and TEM analyses. The results indicate that the poly-SiGe thin films fabricated by this method are applicable for SiGe-based electronic and optical devices on inexpensive substrates. Moreover, fabrication of high quality poly-SiGe thin films on a-Si thin film enables the application in multi-junction solar cell as the bottom cell.