Thermal expansion coefficient of Diamond/SiC composites prepared by silicon vapor infiltration in vacuum. (January 2019)
- Record Type:
- Journal Article
- Title:
- Thermal expansion coefficient of Diamond/SiC composites prepared by silicon vapor infiltration in vacuum. (January 2019)
- Main Title:
- Thermal expansion coefficient of Diamond/SiC composites prepared by silicon vapor infiltration in vacuum
- Authors:
- Zheng, Wei
He, Xinbo
Wu, Mao
Ren, Shubin
Cao, Shunli
Guan, Dandan
Liu, Rongjun
Qu, Xuanhui - Abstract:
- Abstract: Diamond/SiC composites were fabricated by Si-vapor reactive infiltration where graphite was used to generate SiC via an SiC reaction. The composites exhibited an inward growth of SiC and cracks within the diamond. In the strong interfacial bonding, Si diffusion occurred on the surface of the diamond. The thermal expansion coefficient (CTE) and thermal residual stress at different infiltration temperatures were simultaneously investigated. It was found that the CTE values increased from 1.2 to 4.5 × 10 −6 K −1 in the measured temperature range, while the presence of large-sized crushed diamond, high SiC content and high infiltration temperature enhanced the CTE values. In the low-temperature range, the measured CTEs agreed with those predicted by the Turner model; while in the high-temperature range they agreed with those predicted by the lower-bound Schapery model. Additionally, based on the Raman spectra, the thermal residual stresses were found to be 0.85, 1.76, 2.15 and 2.67 GPa at the infiltration temperatures of 1550, 1600, 1650, and 1700 °C, respectively. Highlights: High infiltration temperature would decrease the Si, improve the formation of SiC and lead to the crack of the diamond. CTE was increased by adopting the large crushed diamond, more SiC and higher infiltration temperature. CTE was predicted by the method of the second iteration based on assumption of the core-shell model. Thermal residual stresses were respectively 0.85, 1.76, 2.15 and 2.67 GPaAbstract: Diamond/SiC composites were fabricated by Si-vapor reactive infiltration where graphite was used to generate SiC via an SiC reaction. The composites exhibited an inward growth of SiC and cracks within the diamond. In the strong interfacial bonding, Si diffusion occurred on the surface of the diamond. The thermal expansion coefficient (CTE) and thermal residual stress at different infiltration temperatures were simultaneously investigated. It was found that the CTE values increased from 1.2 to 4.5 × 10 −6 K −1 in the measured temperature range, while the presence of large-sized crushed diamond, high SiC content and high infiltration temperature enhanced the CTE values. In the low-temperature range, the measured CTEs agreed with those predicted by the Turner model; while in the high-temperature range they agreed with those predicted by the lower-bound Schapery model. Additionally, based on the Raman spectra, the thermal residual stresses were found to be 0.85, 1.76, 2.15 and 2.67 GPa at the infiltration temperatures of 1550, 1600, 1650, and 1700 °C, respectively. Highlights: High infiltration temperature would decrease the Si, improve the formation of SiC and lead to the crack of the diamond. CTE was increased by adopting the large crushed diamond, more SiC and higher infiltration temperature. CTE was predicted by the method of the second iteration based on assumption of the core-shell model. Thermal residual stresses were respectively 0.85, 1.76, 2.15 and 2.67 GPa from 1550, 1600, 1650 to 1700 °C. … (more)
- Is Part Of:
- Vacuum. Volume 159(2019)
- Journal:
- Vacuum
- Issue:
- Volume 159(2019)
- Issue Display:
- Volume 159, Issue 2019 (2019)
- Year:
- 2019
- Volume:
- 159
- Issue:
- 2019
- Issue Sort Value:
- 2019-0159-2019-0000
- Page Start:
- 507
- Page End:
- 515
- Publication Date:
- 2019-01
- Subjects:
- Diamond -- SiC -- Thermal expansion coefficient (CTE) -- Model -- Thermal residual stress
Vacuum -- Periodicals
621.55 - Journal URLs:
- http://www.elsevier.com/journals ↗
http://www.sciencedirect.com/science/journal/0042207X ↗ - DOI:
- 10.1016/j.vacuum.2018.11.008 ↗
- Languages:
- English
- ISSNs:
- 0042-207X
- Deposit Type:
- Legaldeposit
- View Content:
- Available online (eLD content is only available in our Reading Rooms) ↗
- Physical Locations:
- British Library DSC - 9139.000000
British Library DSC - BLDSS-3PM
British Library STI - ELD Digital store - Ingest File:
- 9044.xml