Wafer-scale homogeneity of transport properties in epitaxial graphene on SiC. (June 2015)

• Record Type: Journal Article
• Authors: Yager, Tom; Lartsev, Arseniy; Yakimova, Rositsa; Lara-Avila, Samuel; Kubatkin, Sergey
• Is Part Of: Carbon. Volume 87(2015)
• Page Start: 409
• Page End: 414
• Publication Date: 2015-06
• Subjects: Carbon -- Periodicals; Carbone -- Périodiques; Koolstof; Toepassingen; Electronic journals; 546.681
• DOI: 10.1016/j.carbon.2015.02.058
• Languages: English
• ISSNs: 0008-6223

Abstract

Abstract: Magnetotransport measurements on Hall bar devices fabricated on purely monolayer epitaxial graphene on silicon carbide (SiC/G) show a very tight spread in carrier concentration and mobility across wafer-size dimensions. In contrast, SiC/G devices containing bilayer graphene domains display variations in their electronic properties linked to the amount of bilayer content. The spread in properties among devices patterned on the same SiC/G wafer can thus be understood by considering the inhomogeneous number of layers often grown on the surface of epitaxial graphene on SiC.