Phase Separation in Organic Semiconducting/Ferroelectric Blend Films with Air-Stable Resistive Properties. (2018)
- Record Type:
- Journal Article
- Title:
- Phase Separation in Organic Semiconducting/Ferroelectric Blend Films with Air-Stable Resistive Properties. (2018)
- Main Title:
- Phase Separation in Organic Semiconducting/Ferroelectric Blend Films with Air-Stable Resistive Properties
- Authors:
- Weng, Junhui
Chen, Qiusong
Liu, Weilin
Qiu, Xunlin
Zhu, Guodong - Abstract:
- Abstract: Organic semiconducting/ferroelectric blend films integrate both resistive and rectifying properties and thus well solve the cross-talk problem usually suffered in resistive memories. Till now several kinds of semiconducting/ferroelectric blend systems have been developed with good retention and ON/OFF properties. However, seldom work concerns air stability of their electrical properties. Here we report one kind of blend resistive films with air-stable Poly[(9, 9-dioctylfluorenyl-2, 7-diyl) -alt-co-(bithiophene)] (F8T2) as semiconducting material and the copolymer of vinylidene fluoride and trifluoroethylene (P(VDF-TrFE)) as ferroelectric material. We introduce AFM based nanoscale electrical measurements into the observation of phase separation in F8T2/P(VDF-TrFE) blend films. Conductive AFM measurements present discrete high-conductivity circular domains embedded in continuous low-conductivity matrix. Surface Potential Microscopy results further indicate that these discrete circular domains show lower surface potential than those from their surrounding matrix, implying the difference in chemical structures. It is reasonable to attribute those continuous surrounding matrix to ferroelectric P(VDF-TrFE) phase and those discrete circular domains to semiconducting F8T2 phase who penetrates the whole film resulting in large electrical conductivity. F8T2/P(VDF-TrFE) resistive blend films present good restive performance with high ON/OFF ratio up to 3.5×10 3 . Such blendAbstract: Organic semiconducting/ferroelectric blend films integrate both resistive and rectifying properties and thus well solve the cross-talk problem usually suffered in resistive memories. Till now several kinds of semiconducting/ferroelectric blend systems have been developed with good retention and ON/OFF properties. However, seldom work concerns air stability of their electrical properties. Here we report one kind of blend resistive films with air-stable Poly[(9, 9-dioctylfluorenyl-2, 7-diyl) -alt-co-(bithiophene)] (F8T2) as semiconducting material and the copolymer of vinylidene fluoride and trifluoroethylene (P(VDF-TrFE)) as ferroelectric material. We introduce AFM based nanoscale electrical measurements into the observation of phase separation in F8T2/P(VDF-TrFE) blend films. Conductive AFM measurements present discrete high-conductivity circular domains embedded in continuous low-conductivity matrix. Surface Potential Microscopy results further indicate that these discrete circular domains show lower surface potential than those from their surrounding matrix, implying the difference in chemical structures. It is reasonable to attribute those continuous surrounding matrix to ferroelectric P(VDF-TrFE) phase and those discrete circular domains to semiconducting F8T2 phase who penetrates the whole film resulting in large electrical conductivity. F8T2/P(VDF-TrFE) resistive blend films present good restive performance with high ON/OFF ratio up to 3.5×10 3 . Such blend films show excellent electrical stability in air even after aging of 200 days. … (more)
- Is Part Of:
- Materials today. Volume 5:Number 12(2018)Part 2
- Journal:
- Materials today
- Issue:
- Volume 5:Number 12(2018)Part 2
- Issue Display:
- Volume 5, Issue 12, Part 2 (2018)
- Year:
- 2018
- Volume:
- 5
- Issue:
- 12
- Part:
- 2
- Issue Sort Value:
- 2018-0005-0012-0002
- Page Start:
- 25873
- Page End:
- 25878
- Publication Date:
- 2018
- Subjects:
- semiconducting/ferroelectric blend -- resistive memory -- AFM -- phase separation
Materials science -- Congresses -- Periodicals
620.1 - Journal URLs:
- http://www.sciencedirect.com/science/journal/22147853 ↗
http://www.sciencedirect.com/ ↗ - DOI:
- 10.1016/j.matpr.2018.07.108 ↗
- Languages:
- English
- ISSNs:
- 2214-7853
- Deposit Type:
- Legaldeposit
- View Content:
- Available online (eLD content is only available in our Reading Rooms) ↗
- Physical Locations:
- British Library DSC - BLDSS-3PM
British Library HMNTS - ELD Digital store - Ingest File:
- 9018.xml