Highly ordered catalyst-free InGaN/GaN core–shell architecture arrays with expanded active area region. (January 2015) - Jung, Byung Oh
Abstract: Highly ordered, position-controlled gallium nitride (GaN) nanowire based multiple-quantum-wells (MQWs) core–shell architecture arrays are synthesized by metalorganic chemical vapor deposition (MOCVD). We investigate the possibility of using GaN nanowire arrays as a basal template for the growth of In x Ga1− x N/GaN MQWs. The MQWs on three different crystal facets ( c -, m -, and semipolar -plane) of GaN nanowire exhibit dissimilar structural properties. The structural characteristics of InGaN/GaN core–shell arrays are inspected by cross-sectional high-resolution transmission electron microscopy (HR-TEM). We also investigate the optical properties of MQW core–shell structure nanoarrays. The luminescent characteristics of InGaN/GaN core–shell structure arrays are determined by photoluminescence (PL) and cathodoluminescence (CL) measurements. The monochromatic CL images clearly show the light emission behavior of InGaN/GaN MQW coaxial structure. Two distinguishable light emission peaks were observed in the GaN nanowire based core–shell structure. The characteristic of light emission mainly depends on the properties of MQWs, which are generated from different crystal facets of GaN. In addition, the light emission intensity shows different behaviors depending on the area of the GaN nanowire m -plane. The results of this study suggest that GaN nanowire arrays can be used as a good alternative basal template for next-generation light-emitting diodes (LEDs). Graphical abstract: Highlights: This research describes a scalable process for the precise position-controlled selective area growth of GaN nanoarchitecture and its based InGaN/GaN MQWs core–shell arrays. The InGaN/GaN MQWs on three different crystal facets of GaN nanowire exhibit dissimilar structural and optical properties. The light emission mainly comes from MQWs on nonpolar { 1 1 ̄ 00 } m -plane sidewalls. The Fill factor (FF) is markedly increased up to 204.2% according to the m -plane height of the GaN nanowire.