Behavior of carbon in electron beam melted mc-silicon. (November 2015)

• Record Type: Journal Article
• Authors: Qin, Shiqiang; Jiang, Dachuan; Tan, Yi; Li, Pengting; Wang, Peng; Shi, Shuang
• Is Part Of: Vacuum. Volume 121(2015)
• Page Start: 207
• Page End: 211
• Publication Date: 2015-11
• Subjects: Silicon -- Carbides -- Melting -- Solar cells -- Electron beam; Vacuum -- Periodicals; 621.55
• DOI: 10.1016/j.vacuum.2015.08.022
• Languages: English
• ISSNs: 0042-207X

Abstract

Abstract: The behavior of carbon in multicrystalline silicon scraps by electron beam melting was investigated in this study. It was found that the process favors nucleation of SiC on Si3 N4. Furthermore, carbon tends to gather to top surface of the ingots with increasing melting time, and the reaction between oxygen and carbon favors carbon migration. The melt convection and temperature gradient caused by electron beam are employed to be the dominate reason the phenomenon occurs. The results can provide guidance in silicon recycling. Highlights: Carbon behavior in electron beam melted silicon was investigated for the first time. Special morphology of SiC gathered to ingots' top surface after electron beam melting. Electron beam melting can be a possible way to separate SiC from silicon scraps.