Cite
HARVARD Citation
Amarnath, G. et al. (2019). Modeling and simulation of DC and microwave characteristics of AlInN(AlGaN)/AlN/GaN MOSHEMTs with different gate lengths. International journal of numerical modelling. p. n/a. [Online].
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Amarnath, G. et al. (2019). Modeling and simulation of DC and microwave characteristics of AlInN(AlGaN)/AlN/GaN MOSHEMTs with different gate lengths. International journal of numerical modelling. p. n/a. [Online].