On the use of new generation mobile phone (smart phone) for retrospective accident dosimetry. (November 2015)

• Record Type: Journal Article
• Authors: Lee, J.I.; Chang, I.; Pradhan, A.S.; Kim, J.L.; Kim, B.H.; Chung, K.S.
• Is Part Of: Radiation physics and chemistry. Volume 116(2015:Nov.)
• Page Start: 151
• Page End: 154
• Publication Date: 2015-11
• Subjects: Optically stimulated luminescence -- Retrospective dosimetry -- Mobile phone -- Smart phone -- Electronic components; Radiation chemistry -- Periodicals; Radiometry -- Periodicals; Radiation -- Periodicals; Chimie sous rayonnement -- Périodiques; 539.2
• DOI: 10.1016/j.radphyschem.2015.05.004
• Languages: English
• ISSNs: 0969-806X

Abstract

Abstract: Optically stimulated luminescence (OSL) characteristics of resistors, inductors and integrated-circuit (IC) chips, extracted from new generation smart phones, were investigated for the purpose of retrospective accident dosimetry. Inductor samples were found to exhibit OSL sensitivity about 5 times and 40 times higher than that of the resistors and the IC chips, respectively. On post-irradiation storage, the resistors exhibited a much higher OSL fading (about 80 % in 36 h as compared to the value 3 min after irradiation) than IC chips (about 20 % after 36 h) and inductors (about 50 % in 36 h). Higher OSL sensitivity, linear dose response (from 8.7 mGy up to 8.9 Gy) and acceptable fading make inductors more attractive for accident dosimetry than widely studied resistors. Highlights: OSL properties of electronic components from a smart phone were investigated. OSL Sensitivity of inductor was estimated to 5 times higher than that of resistor. Inductor exhibits most attractive properties for retrospective accident dosimetry.