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HARVARD Citation
Chung, G. et al. (n.d.). Investigation of stress, defect structure and electrical conduction in large diameter III‐nitride epitaxy on silicon substrates. Physica status solidi. 12 (4), pp. 418-422. [Online].
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Chung, G. et al. (n.d.). Investigation of stress, defect structure and electrical conduction in large diameter III‐nitride epitaxy on silicon substrates. Physica status solidi. 12 (4), pp. 418-422. [Online].