Development of Si neural probe with piezoresistive force sensor for minimally invasive and precise monitoring of insertion forces. (23rd March 2017)

• Record Type: Journal Article
• Authors: Harashima, Takuya; Morikawa, Takumi; Kino, Hisashi; Fukushima, Takafumi; Tanaka, Tetsu
• Is Part Of: Japanese journal of applied physics. Volume 56:Number 4(2017)Supplement
• Publication Date: 2017-03-23
• Subjects: Physics -- Periodicals; 621.05
• DOI: 10.7567/JJAP.56.04CM04
• Languages: English
• ISSNs: 0021-4922

Abstract

Abstract: A Si neural probe is one of the most important tools for neurophysiology and brain science because of its various functions such as optical stimulation and drug delivery. However, the Si neural probe is not robust compared with a metal tetrode, and could be broken by mechanical stress caused by insertion to the brain. Therefore, the Si neural probe becomes more useful if it has a stress sensor that can measure mechanical forces applied to the probe so as not to be broken. In this paper, we proposed and fabricated the Si neural probe with a piezoresistive force sensor for minimally invasive and precise monitoring of insertion forces. The fabricated piezoresistive force sensor accurately measured forces and successfully detected insertion events without buckling or bending in the shank of the Si neural probe. This Si neural probe with a piezoresistive force sensor has become one of the most versatile tools for neurophysiology and brain science.