Difference analysis method for negative bias temperature instability lifetime prediction in deeply scaled pMOSFETs. (13th March 2017)

• Record Type: Journal Article
• Authors: Liao, Yiming; Ji, Xiaoli; Zhang, Chengxu; Huang, Xiaolin; Xu, Yue; Yan, Feng
• Is Part Of: Japanese journal of applied physics. Volume 56:Number 4(2017)Supplement
• Publication Date: 2017-03-13
• Subjects: Physics -- Periodicals; 621.05
• DOI: 10.7567/JJAP.56.04CD13
• Languages: English
• ISSNs: 0021-4922

Abstract

Abstract: The fluctuation significantly affects the lifetime prediction of negative bias temperature instability (NBTI) for deeply scaled pMOSFETs. In this paper, we present a novel difference method to separate the time dependent fluctuation-related component from the NBTI quasi-static component in the threshold voltage shift. The extracted fluctuation-related component exhibits weak temperature and time dependences which is consistent with the characteristic of as-grown defect-induced trapping and detrapping while the quasi-static component presents electrical behaviors of generated-defect-induced NBTI degradation. On the basis of these results, a composite NBTI model is constructed and lifetime projection is derived for the small pMOSFETs.