High-efficiency MOSFET bridge rectifier for AlN MEMS cantilever vibration energy harvester. (6th March 2017)

• Record Type: Journal Article
• Authors: Takei, Ryohei; Okada, Hironao; Noda, Daiji; Ohta, Ryo; Takeshita, Toshihiro; Itoh, Toshihiro; Kobayashi, Takeishi
• Is Part Of: Japanese journal of applied physics. Volume 56:Number 4(2017)Supplement
• Publication Date: 2017-03-06
• Subjects: Physics -- Periodicals; 621.05
• DOI: 10.7567/JJAP.56.04CC03
• Languages: English
• ISSNs: 0021-4922

Abstract

Abstract: We developed a high-efficiency MOSFET bridge rectifier for use in an aluminum nitride (AlN) piezoelectric MEMS cantilever vibration energy harvester (VEH). The bridge rectifier consists of four MOSFETs with a circuit configuration similar to that of a typical diode bridge rectifier. The output voltage of the full-wave rectification via the MOSFET bridge was simulated with an equivalent circuit model of the AlN VEH, which is extracted from an experimental result. The channel width of the MOSFET was designed to be adopted for use with a high-voltage and low-current AlN VEH. The designed rectifier was fabricated using the 0.18 µm high voltage technology of a commercially available CMOS foundry. The AlN VEH with our bridge rectifier generated a DC power of 0.514 µW at 2.49 V under an applied vibration with an acceleration amplitude of 0.5 m/s 2 at a frequency of 46.6 Hz. The DC power is 1.4 times higher than that generated by the same AlN VEH with a MOSFET bridge consisting of commercially available discrete MOSFETs.