Temperature- and doping-concentration-dependent characteristics of junctionless gate-all-around polycrystalline-silicon thin-film transistors. (15th March 2017)

• Record Type: Journal Article
• Authors: Tso, Chia-Tsung; Liu, Tung-Yu; Pan, Fu-Ming; Sheu, Jeng-Tzong
• Is Part Of: Japanese journal of applied physics. Volume 56:Number 4(2017)Supplement
• Publication Date: 2017-03-15
• Subjects: Physics -- Periodicals; 621.05
• DOI: 10.7567/JJAP.56.04CD14
• Languages: English
• ISSNs: 0021-4922

Abstract

Abstract: The temperature effects of both gate-all-around polycrystalline silicon nanowire (GAA poly-Si NW) junctionless (JL) and inversion mode (IM) transistor devices at various temperatures (77–410 K) were investigated. The electrical characteristics of these devices, such as subthreshold swing (SS), threshold voltage ( V th ), and drain-induced barrier lowering (DIBL), were also characterized and compared in this study. Moreover, JL devices with different doping concentrations at various temperatures were also discussed. Both V th and I on showed significant doping concentration dependences for JL devices with doping concentrations of 1 × 10 19 and 5 × 10 19 cm −3 . However, the electrical characteristics of JL devices showed less thermal sensitivity when the doping concentration reached 10 20 cm −3 .