Light–matter interaction in transition metal dichalcogenides and their heterostructures. (23rd March 2017)

• Record Type: Journal Article
• Authors: Wurstbauer, Ursula; Miller, Bastian; Parzinger, Eric; Holleitner, Alexander W
• Is Part Of: Journal of physics. Volume 50:Number 17(2017)
• Publication Date: 2017-03-23
• Subjects: 2D materials -- transition metal dichalcogenide -- light–matter interaction -- Raman -- van der Waals heterostructures -- dielectric function; Physics -- Periodicals; 530
• DOI: 10.1088/1361-6463/aa5f81
• Languages: English
• ISSNs: 0022-3727

Abstract

Abstract: The investigation of two-dimensional (2D) van der Waals materials is a vibrant, fast-moving and still growing interdisciplinary area of research. These materials are truly 2D crystals with strong covalent in-plane bonds and weak van der Waals interaction between the layers, and have a variety of different electronic, optical and mechanical properties. Transition metal dichalcogenides are a very prominent class of 2D materials, particularly the semiconducting subclass. Their properties include bandgaps in the near-infrared to the visible range, decent charge carrier mobility together with high (photo-) catalytic and mechanical stability, and exotic many-body phenomena. These characteristics make the materials highly attractive for both fundamental research as well as innovative device applications. Furthermore, the materials exhibit a strong light–matter interaction, providing a high sunlight absorbance of up to 15% in the monolayer limit, strong scattering cross section in Raman experiments, and access to excitonic phenomena in van der Waals heterostructures. This review focuses on the light–matter interaction in MoS2, WS2, MoSe2 and WSe2, which is dictated by the materials' complex dielectric functions, and on the multiplicity of studying the first-order phonon modes by Raman spectroscopy to gain access to several material properties such as doping, strain, defects and temperature. 2D materials provide an interesting platform for stacking them into van der Waals heterostructures without the limitation of lattice mismatch, resulting in novel devices for applications but also to enable the study of exotic many-body interaction phenomena such as interlayer excitons. Future perspectives of semiconducting transition metal dichalcogenides and their heterostructures for applications in optoelectronic devices will be examined, and routes to study emergent fundamental problems and many-body quantum phenomena under excitations with photons will be discussed.