Universal scaling of the anomalous Hall effect. (13th March 2017)

• Record Type: Journal Article
• Authors: Zhang, Xiaoqian; Wang, Wei; Wang, Kejie; Niu, Wei; Lai, Bolin; Maltby, Nick; Yang, Mao; Gao, Ming; Liu, Wenqing; He, Liang; Zhang, Rong; Xu, Yongbing
• Is Part Of: Journal of physics. Volume 50:Number 15(2017)
• Publication Date: 2017-03-13
• Subjects: ultra-thin film -- metal–semiconductor transition -- intrinsic term -- magnetization decreasing; Physics -- Periodicals; 530
• DOI: 10.1088/1361-6463/aa5b1c
• Languages: English
• ISSNs: 0022-3727

Abstract

Abstract: We have undertaken a detailed study of the magneto-transport properties of ultra-thin Fe films epitaxially grown on GaAs (1 0 0). A metal–semiconductor transition has been observed with a critical thickness of 1.25 nm, which was thought to be related to the thermally activated tunneling between metallic clusters. By fitting ρ AH versus ρ x x 2 with the TYJ equation (Tian et al 2009 Phys. Rev. Lett .103 087206 ), we found that the magnetization is negligible for the scaling of the anomalous Hall effect in ultra-thin Fe films. Furthermore, the intrinsic term, which is acquired by the linear fitting of ρ AH versus ρ x x 2, shows an obvious decrease when the film thickness drops below 1.25 nm, which was thought to be related to the fading of the Berry curvature in the ultra-thin film limit.