Improving the electrical performance of MoS2 by mild oxygen plasma treatment. (13th March 2017)

• Record Type: Journal Article
• Authors: Nan, Haiyan; Wu, Zhangting; Jiang, Jie; Zafar, Amina; You, Yumeng; Ni, Zhenhua
• Is Part Of: Journal of physics. Volume 50:Number 15(2017)
• Publication Date: 2017-03-13
• Subjects: MoS2 -- photoluminescence -- mobility -- oxygen plasma -- defects; Physics -- Periodicals; 530
• DOI: 10.1088/1361-6463/aa5c6a
• Languages: English
• ISSNs: 0022-3727

Abstract

Abstract: Two-dimensional (2D) molybdenum disulfide (MoS2 ) is considered as a promising candidate for electronic and optoelectronic devices. However, structural defects in MoS2 are widely reported and can greatly degrade its electrical and optical properties. In this work, we investigate the structural defects in MoS2 by low temperature photoluminescence (PL) spectroscopy and study their effects on the electrical performance, i.e. carrier mobility. We also adopt the mild oxygen plasma treatment to repair the structural defects and found that the carrier mobility of monolayer MoS2 can be greatly improved. This work would therefore offer a practical route to improve the performance of 2D dichalcogenide-based electrical and optoelectronic devices.