Indentation-induced crystallisation in amorphous silicon thin films. (6th September 2007)

• Record Type: Journal Article
• Authors: Xu, Z.W.; Ngan, A.H.W.
• Is Part Of: International journal of surface science and engineering. Volume 1:Number 2/3(2007)
• Page Start: 308
• Page End: 321
• Publication Date: 2007-09-06
• Subjects: deformation -- fracture -- amorphous silicon -- indentation -- phase transformation -- electron microscopy -- Raman spectroscopy -- thin films -- Vickers indentations -- crystallisation; Surfaces (Physics) -- Periodicals; Surface chemistry -- Periodicals; Surfaces (Technology) -- Periodicals; Tribology -- Periodicals; 530.417
• Languages: English
• ISSNs: 1749-785X

Abstract

Three amorphous silicon films with different ordering were deposited by magnetron sputtering at 300 K, 673 K and 873 K, respectively. Vickers indentations were made on the samples by loads of 9.8 N, 4.9 N and 0.49 N. Si-I phase was present in the indentations at 9.8 N on the film deposited at 300 K, but evidence for crystallisation into Si-I was less obvious at lower loads at 300 K, or in other films deposited at higher temperatures. The formation of the Si-I phase was probably due to delamination fracture. An increase in the disordering degree induced by indentation was also found in the film deposited at 873 K.