Analysis of conduction mechanism in silicon nitride-based RRAM. (17th March 2014)

• Record Type: Journal Article
• Authors: Jung, Sunghun; Kim, Sungjun; Oh, Jeong-Hoon; Ryoo, Kyung-Chang; Lee, Jong-Ho; Shin, Hyungcheol; Park, Byung-Gook
• Is Part Of: International journal of nanotechnology. Volume 11:Number 1/2/3/4(2014)
• Page Start: 167
• Page End: 177
• Publication Date: 2014-03-17
• Subjects: RRAM -- conduction mechanism -- Si 3 N 4 -- metal-insulator-semiconductor (MIS) structure -- SCLC -- space charge limited conduction.; 620.505
• Languages: English
• ISSNs: 1475-7435

Abstract

The conduction mechanism in Ti/Si3 N4 /p-Si memory stack is described. In order to analyse the conduction mechanism, we have measured the I–V characteristics in voltage sweep mode and performed I–V curve fitting. The temperature dependence in Ti/Si3 N4 /p-Si stacked cell has also been investigated because we cannot identify the conduction mechanism just based on the I–V curve fitting. From I–V curve fitting and temperature measurement data, we have found that space charge limited conduction (SCLC) model is the most probable mechanism in both high resistance state (HRS) and low resistance state (LRS).