Electrical contacts to single nanowires: a scalable method allowing multiple devices on a chip. Application to a single nanowire radial p–i–n junction. (29th April 2013)

• Record Type: Journal Article
• Authors: Blanc, Pierre; Heiss, Martin; Colombo, Carlo; Mallorquì, Anna Dalmau; Safaei, Tina Saberi; Krogstrup, Peter; Nygård, Jesper; Morral, Anna Fontcuberta i
• Is Part Of: International journal of nanotechnology. Volume 10:Number 5/6/7(2013)
• Page Start: 419
• Page End: 432
• Publication Date: 2013-04-29
• Subjects: nanotechnology -- electrical contacts -- semiconductor nanowires -- solar cells -- radial p–i–n junctions -- GaAs -- gallium arsenide -- nanoelectronics -- energy conversion -- electron beam lithography; 620.505
• Languages: English
• ISSNs: 1475-7435

Abstract

Semiconductor nanowires are currently at the forefront of research in the areas of nanoelectronics and energy conversion. In all these studies, realising electrical contacts and statistically relevant measurements is a key issue. We propose a method that enables to contact hundreds of nanowires on a single wafer in an extremely fast electron beam lithography session. The method is applied to nanowire–based radial GaAs p–i–n junction. Current–voltage characteristics are shown, along with scanning photocurrent mapping.