Role of impurities in GaAs affecting the quantisation of electrons passage through island in single electron transistor. (1st October 2009)

• Record Type: Journal Article
• Authors: Abdalla, S.; El-Shirbeeny, W.
• Is Part Of: International journal of nanoparticles. Volume 2:Number 1/2/3/4/5/6(2009)
• Page Start: 490
• Page End: 496
• Publication Date: 2009-10-01
• Subjects: single electron transistors -- SET -- impurity potential -- impurities -- charge quantisation -- semi-insulating GaAs -- gallium arsenide -- nanocrystals -- nanotechnology; Nanotechnology -- Periodicals; 620.505
• Languages: English
• ISSNs: 1753-2507

Abstract

We show that the presence of inevitable impurities in the semi-insulating GaAs domains when manufacturing a single electron transistor (SET) alters the quantisation mechanism of the single electron tunnelling through its course inside the island. Moreover, these impurities affect the amount of energy needed to change the number of electrons on the island. This decreases drastically the quality of the SET. The published experimental data (I-V characteristics) of GaAs nano-crystals has been well fitted to our model.