A molecular theoretic approach to GaN. (10th August 2009)

• Record Type: Journal Article
• Authors: Al-Hazmi, F.S.; Siddiqui, Khursheed Athar; Al-Zahrani, Ali Zain Hamed
• Is Part Of: International journal of nano and biomaterials. Volume 2:Number 1/2/3/4/5(2009)
• Page Start: 425
• Page End: 430
• Publication Date: 2009-08-10
• Subjects: gallium nitride -- surface plasmon -- semiconductor materials -- nanoelectronics -- nanomaterials -- nanotechnology -- molecular theory; Nanostructured materials -- Periodicals; Nanotechnology -- Periodicals; Biomedical materials -- Periodicals; 620.505
• Languages: English
• ISSNs: 1752-8933

Abstract

Gallium nitride is one of the most important semi-conductor material and a possible candidate for nano-electronic devices. Gallium nitride layers are getting importance towards the possible application for nanotechnology. A molecular theoretic approach is given here for the band structure calculations of gallium nitride structures. One of the main objectives of this work is to study the excitation of surface plasmon and to show how surface plasmon can be exploited by the experimentalists to understand the properties of nanomaterials.