Estimating mobility and lifetime of charge carriers in semiconductor detectors using Genetic Algorithms. (30th June 2010)

• Record Type: Journal Article
• Authors: Shaaban, Noha
• Is Part Of: International journal of signal and imaging systems engineering. Volume 2:Number 3(2009)
• Page Start: 148
• Page End: 152
• Publication Date: 2010-06-30
• Subjects: compound semiconductor detectors -- GAs -- genetic algorithms -- mobility -- charge carrier lifetime -- signal waveform -- digital signal processing -- DSP -- Hecht equation -- charge carriers -- electrons -- holes -- semiconductor materials; Signal processing -- Periodicals; Imaging systems -- Periodicals; Information theory -- Periodicals; 621.3822
• Languages: English
• ISSNs: 1748-0698

Abstract

A Genetic Algorithm (GA) was adopted to extract realistic values of the transport properties of both electrons and holes in semiconductor materials. A theoretical waveform model was fitted to the real digitised signal waveform taking into account the realistic transport parameters. This method is simple and useful for pulse shape analysis; the result demonstrates promise for the successful application of GAs for the estimation of detector parameters in semiconductor detectors.