Cite
HARVARD Citation
Beltrán, A. et al. (2015). Atomic scale characterization of SiO2/4H-SiC interfaces in MOSFETs devices. Solid state communications. pp. 28-32. [Online].
This is an interim version of our Electronic Legal Deposit Catalogue-eJournals and eBooks while we continue to recover from a cyber-attack.
Beltrán, A. et al. (2015). Atomic scale characterization of SiO2/4H-SiC interfaces in MOSFETs devices. Solid state communications. pp. 28-32. [Online].