Nanoscale Characterization of Active Doping Concentration in Boron‐Doped Individual Si Nanocrystals (Phys. Status Solidi A 23∕2018). Issue 23 (5th December 2018)

• Record Type: Journal Article
• Authors: Xu, Jie; Li, Dongke; Chen, Deyuan; Li, Wei; Xu, Jun
• Is Part Of: Physica status solidi. Volume 215:Issue 23(2018)
• Page Start: n/a
• Page End: n/a
• Publication Date: 2018-12-05
• Subjects: Solid state physics -- Periodicals; Solids -- Industrial applications -- Periodicals; 530.41
• DOI: 10.1002/pssa.201870052
• Languages: English
• ISSNs: 1862-6300

Abstract

Abstract : Si Nanocrystals The doping effect of individual B‐doped Si nanocrystals (NCs) is characterized by surface potential imaging using Kelvin probe force microscopy measurement. Furthermore, the real tip‐sample contact potential difference (CPD) is obtained through a Wiener filter to quantify the active B doping concentration. More details can be found in the article number1800531 by Jie Xu, Jun Xu and co‐workers.