A functional model of silicon carbide JFET and its use in the analysis of switching-transient and impact of gate resistor, miller effect and parasitic inductance. (26th January 2010)

• Record Type: Journal Article
• Authors: Bai, Hua; Pan, Sanbo; Mi, Chris; Lin, Tim
• Is Part Of: International journal of power electronics. Volume 2:Number 2(2010)
• Page Start: 164
• Page End: 175
• Publication Date: 2010-01-26
• Subjects: silicon carbide -- JFET performance -- inverters -- miller effect -- switching speed -- parasitic inductance -- power electronics -- gate resistors -- gate current impact -- voltage spikes -- oscillation -- junction gate field-effect transistor; Power electronics -- Periodicals; 621.31705
• Languages: English
• ISSNs: 1756-638X

Abstract

A functional model of silicon carbide (SiC) JFET was developed to study its performance. Based on this model, the gate resistor in the gate drive circuit of SiC JFET is optimised with comprehensive consideration of gate current impact, miller effect, switching speed and voltage spikes. The switch on oscillation caused by parasitic inductance is analysed and methods are proposed to mitigate the oscillation. Experiments on a 300 V prototype validated the proposed model.